Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001)

被引：63

作者：

Lee, CD ^{[1
]}

Sagar, A

Feenstra, RM

Inoki, CK

Kuan, TS

Sarney, WL

Salamanca-Riba, L

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] SUNY Albany, Dept Phys, Albany, NY 12222 USA

[3] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 21期

关键词：

D O I：

10.1063/1.1421091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN films are grown by plasma-assisted molecular-beam epitaxy on SiC substrates. The width of the x-ray rocking curve for the (10 (1) over bar2) reflection exhibits a distinct minimum for Ga/N flux ratios which are only slightly greater than unity. Correlated with this minimum, the surface morphology is somewhat rough, with a hill and valley topography. Based on transmission electron micrographs, the reduction in rocking curve width is attributed to enhanced annihilation of edge dislocations due to their tendency to cluster at topographic valleys. (C) 2001 American Institute of Physics.

引用

页码：3428 / 3430

页数：3

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