Band alignment at the Cu2ZnSn(SxSe1-x)4/CdS interface

被引：251

作者：

Haight, Richard ^{[1
]}

Barkhouse, Aaron ^{[1
]}

Gunawan, Oki ^{[1
]}

Shin, Byungha ^{[1
]}

Copel, Matt ^{[1
]}

Hopstaken, Marinus ^{[1
]}

Mitzi, David B. ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 25期

关键词：

FILM SOLAR-CELLS; OFFSET; LAYERS;

D O I：

10.1063/1.3600776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Energy band alignments between CdS and Cu2ZnSn(SxSe1-x)(4) (CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S]/[S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600776]

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页数：3

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