Determination of band gap energy (Eg) of Cu2ZnSnSe4 thin films: On the discrepancies of reported band gap values

被引：304

作者：

Ahn, SeJin ^{[1
]}

Jung, Sunghun ^{[1
]}

Gwak, Jihye ^{[1
]}

Cho, Ara ^{[1
]}

Shin, Keeshik ^{[1
]}

Yoon, Kyunghoon ^{[1
]}

Park, Doyoung ^{[2
]}

Cheong, Hyonsik ^{[2
]}

Yun, Jae Ho ^{[1
]}

机构：

[1] Korea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea

[2] Sogang Univ, Dept Phys, Seoul 121742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期

关键词：

SELENIZATION; ZN; SN;

D O I：

10.1063/1.3457172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate experimental data to elucidate the reason for the discrepancies of reported band gap energy (E-g) of Cu2ZnSnSe4 (CZTSe) thin films, i.e., 1.0 or 1.5 eV. E-g of the coevaporated CZTSe film synthesized at substrate temperature (T-sub) of 370 degrees C, which was apparently phase pure CZTSe confirmed by x-ray diffraction (XRD) and Raman spectroscopy, is found to be around 1 eV regardless of the measurement techniques. However, depth profile of the same sample reveals the formation of ZnSe at CZTSe/Mo interface. On the other hand, E-g of the coevaporated films increases with T-sub due to the ZnSe formation, from which we suggest that the existence of ZnSe, which is hardly distinguishable from CZTSe by XRD, is the possible reason for the overestimation of overall E-g. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457172]

引用

页数：3

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