Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4

被引：455

作者：

Chen, Shiyou ^{[1
,2
,4
]}

Gong, X. G. ^{[1
,2
]}

Walsh, Aron ^{[5
]}

Wei, Su-Huai ^{[3
]}

机构：

[1] Fudan Univ, Lab Computat Phys Sci, Shanghai 200433, Peoples R China

[2] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China

[3] Natl Renewable Energy Lab, Golden, CO 80401 USA

[4] E China Normal Univ, Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

[5] UCL, Dept Chem, London WC1E 6BT, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 02期

关键词：

antisite defects; copper compounds; crystal structure; impurity states; precipitation; solar cells; stoichiometry; ternary semiconductors; thermodynamics; thin film devices; vacancies (crystal); zinc compounds; PHOTOVOLTAICS; NANOCRYSTALS; SURFACES; CUINSE2;

D O I：

10.1063/1.3275796

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cu2ZnSnS4 is one of the most promising quaternary absorber materials for thin-film solar cells. Examination of the thermodynamic stability of this quaternary compound reveals that the stable chemical potential region for the formation of stoichiometric compound is small. Under these conditions, the dominant defect will be p-type Cu-Zn antisite, which has an acceptor level deeper than the Cu vacancy. The dominant self-compensated defect pair in this quaternary compound is [Cu-Zn(-)+Zn-Cu(+)](0), which leads to the formation of various polytype structures of Cu2ZnSnS4. We propose that to maximize the solar cell performance, growth of Cu2ZnSnS4 under Cu-poor/Zn-rich conditions will be optimal, if the precipitation of ZnS can be avoided by kinetic barriers.

引用

页数：3

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