Electronic level alignment at the deeply buried absorber/Mo interface in chalcopyrite-based thin film solar cells

被引：40

作者：

Baer, M. ^{[1
]}

Nishiwaki, S. ^{[2
]}

Weinhardt, L. ^{[1
]}

Pookpanratana, S. ^{[1
]}

Shafarman, W. N. ^{[2
]}

Heske, C. ^{[1
]}

机构：

[1] Univ Nevada, Dept Chem, Las Vegas, NV 89154 USA

[2] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 04期

关键词：

D O I：

10.1063/1.2955532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the electronic structure of the absorber/back contact interface for S-free [Cu(In, Ga)Se(2) ("CIGSe")] and S-containing [Cu(In, Ga)(S, Se)(2) ("CIGSSe")] chalcopyrites with direct and inverse photoemission. Comparison of the electronic levels of the cleavage planes reveals a pronounced cliff in the conduction band at the CIG(S)Se/Mo interface. For the valence band, we find a flat alignment and a small spike for the CIGSe- and CIGSSe-based structures, respectively. (C) 2008 American Institute of Physics.

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页数：3

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