Precursor mediated adsorption of tertiarybutylarsine on GaAs (001)-(4x6)

被引：13

作者：

Cui, J

Ozeki, M

Ohashi, M

机构：

[1] Jt. Res. Center for Atom Technology, Angstrom Technology Partnership, Higashi 1-1-4, Tsukuba

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 04期

关键词：

D O I：

10.1063/1.118193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The scattering property of tertiarybutylarsine (TBAs) on a GaAs(001)-(4x6) surface at room temperature was studied by supersonic-molecular-beam scattering. Polar angle measurements show that the scattering Signal is due to thermal desorption of trapped molecules combined with a direct-inelastic scattering. The measurement of the sticking coefficient shows a precursor-mediated adsorption behavior. The time;decay curve can be divided into two components with activation energies of 6.9 and 8.3 kcal/mol, revealing that TBAs molecules can physisorb into two different potential wells on the GaAs (001)-(4x6) surface. (C) 1997 American Institute of Physics.

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页码：502 / 504

页数：3

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