RECENT ADVANCES IN ATOMIC LAYER EPITAXY DEVICES

被引：7

作者：

BEDAIR, SM ^{[1
]}

ELMASRY, NA ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

APPLIED SURFACE SCIENCE | 1994年 / 82-3卷

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0169-4332(94)90187-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic layer epitaxy continues to emerge as a promising epitaxial technique when atomic layer thickness control is required in semiconductor device structures. However, ALE still faces several problems such as low growth rate, relatively high carbon background and difficulties in growing high bandgap ternary alloys. This paper will outline recent progress in these areas illustrated by the state-of-art devices recently grown by the ALE technique.

引用

页码：7 / 13

页数：7

共 18 条

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