ATOMIC LAYER EPITAXY OF ALGAAS

被引：20

作者：

GONG, JR

JUNG, D

ELMASRY, NA

BEDAIR, SM

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 04期

关键词：

D O I：

10.1063/1.103675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic layer epitaxy (ALE) has been employed to grow AlGaAs in the temperature range 550-700°C. Monolayer growth was achieved independent of the column III flux. Al incorporates during ALE more efficiently than in metalorganic chemical vapor deposition (MOCVD). The ALE films grown at low temperature have superior photoluminescence properties when compared with the MOCVD-grown films. The as-grown ALE films are p type with carrier concentrations in the 1017-1019/cm3 range, depending on the growth conditions.

引用

收藏

页码：400 / 402

页数：3

相关论文

共 15 条

[1]

ASPNES DE, 1988, INT S GAAS RELATED C

[2] ATOMIC LAYER EPITAXY GROWN HETEROJUNCTION BIPOLAR-TRANSISTOR HAVING A CARBON-DOPED BASE [J].

BHAT, R ;

HAYES, JR ;

COLAS, E ;

ESAGUI, R .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :442-443

[3]

CHIN TH, 1989, APPL PHYS LETT, V55, P1244

[4] REFLECTANCE-DIFFERENCE STUDIES OF ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION GROWTH TRANSIENTS ON (001) GAAS [J].

COLAS, E ;

ASPNES, DE ;

BHAT, R ;

STUDNA, AA ;

KOZA, MA ;

KERAMIDAS, VG .

JOURNAL OF CRYSTAL GROWTH, 1989, 94 (03) :613-618

[5] GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY [J].

DENBAARS, SP ;

BEYLER, CA ;

HARIZ, A ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1987, 51 (19) :1530-1532

[6] ATOMIC LAYER EPITAXY FOR THE GROWTH OF HETEROSTRUCTURE DEVICES [J].

DENBAARS, SP ;

DAPKUS, PD ;

BEYLER, CA ;

HARIZ, A ;

DZURKO, KM .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :195-200

[7] ATOMIC LAYER EPITAXY OF PLANAR-DOPED STRUCTURES FOR NONALLOYED CONTACTS AND FIELD-EFFECT TRANSISTOR [J].

HASHEMI, M ;

RAMDANI, J ;

MCDERMOTT, BT ;

REID, K ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1990, 56 (10) :964-966

[8] INSITU MEASUREMENT OF THE METALORGANIC AND HYDRIDE PARTIAL PRESSURES IN A MOCVD REACTOR USING ULTRAVIOLET-ABSORPTION SPECTROSCOPY [J].

HEBNER, GA ;

KILLEEN, KP ;

BIEFELD, RM .

JOURNAL OF CRYSTAL GROWTH, 1989, 98 (03) :293-301

[9] EFFICIENT SI PLANAR DOPING IN GAAS BY FLOW-RATE MODULATION EPITAXY [J].

KOBAYASHI, N ;

MAKIMOTO, T ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (09) :L746-L748

[10] INSITU X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF GAAS GROWN BY ATOMIC LAYER EPITAXY [J].

KODAMA, K ;

OZEKI, M ;

MOCHIZUKI, K ;

OHTSUKA, N .

APPLIED PHYSICS LETTERS, 1989, 54 (07) :656-657