UV-ozone-treated ultra-thin NaF film as anode buffer layer on organic light emitting devices

被引：28

作者：

Chen, Yu-Cheng ^{[1
]}

Kao, Po-Ching ^{[5
]}

Chu, Sheng-Yuan ^{[1
,2
,3
,4
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Inst Nanotechnol & Microsyst Engn, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[5] Natl Chiayi Univ, Dept Appl Phys, Chiayi 60004, Taiwan

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 13期

关键词：

ELECTROLUMINESCENT DEVICES; HOLE-INJECTION; POWER EFFICIENCY; CONTACT-ANGLE; DIODES; BLOCKING; PLASMA;

D O I：

10.1364/OE.18.00A167

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An ultra-thin NaF film was thermally deposited between ITO and NPB as the buffer layer and then treated with the ultraviolet (UV) ozone, in the fabrication of organic light emitting diodes (ITO/NaF/NPB/Alq(3)/LiF/Al) to study its effect on hole-injection properties. The treatment drastically transforms the role of NaF film from hole-blocking to hole-injecting. This transformation is elucidated using hole-only devices, energy band measurement, surface energy, surface polarity, and X-ray photoelectron spectra. With the optimal thickness (3 nm) of the UV-ozone-treated NaF layer, the device performance is significantly improved, with a turn-on voltage, maximum luminance, and maximum current efficiency of 2.5 V, 15700 cd/m(2), and 4.9 cd/A, respectively. Results show that NaF film is not only a hole-blocking layer, but also a promising hole-injecting layer after UV-ozone treatment. (C) 2010 Optical Society of America

引用

页码：A167 / A173

页数：7

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