Femtosecond and nanosecond laser damage thresholds of doped and undoped triazenepolymer thin films

被引:13
作者
Bonse, J.
Solis, J.
Urech, L.
Lippert, T.
Wokaun, A.
机构
[1] CSIC, Inst Opt, E-28006 Madrid, Spain
[2] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
关键词
femtosecond laser damage; triazenepolymer films; optical microscopy; polymethylmethacrylate;
D O I
10.1016/j.apsusc.2007.02.128
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The influence of pulse duration on the laser-induced damage in undoped or infrared-absorbing-dye doped thin triazenepolymer films on glass substrates has been investigated for single, near-infrared (800 nm) Ti:sapphire laser pulses with durations ranging from 130 fs up to 540 fs and complementarily for infrared (1064 nm) Nd:YAG ns-laser single-pulse irradiation. The triazenepolymer material has been developed for high resolution ablation with irradiation at 308 nm. Post-irradiation optical microscopy observations have been used to determine quantitatively the threshold fluence for permanent laser damage. In contrast to our previous studies on a triazenepolymer with different composition [J. Bonse, S.M. Wiggins, J. Solis, T. Lippert, Appl. Surf. Sci. 247 (2005) 440], a significant dependence of the damage threshold on the pulse duration is found in the sub-picosecond regime with values ranging from similar to 500 mJ/cm(2) (130 fs) up to similar to 1500 mJ/cm(2) (540 fs). Other parameters such as the film thickness (50 nm and 1.1 mu m samples) or the doping level show no significant influence on the material behavior upon irradiation. The results for fs- and ns-laser pulse irradiation are compared and analyzed in terms of existent ablation models. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:7787 / 7791
页数:5
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