InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates

被引：16

作者：

Guo, SP ^{[1
]}

Shen, A ^{[1
]}

Ohno, Y ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 98077, Japan

来源：

PHYSICA E | 1998年 / 2卷 / 1-4期

基金：

日本学术振兴会;

关键词：

quantum dots; quantum dashes; molecular beam epitaxy; photoluminescence;

D O I：

10.1016/S1386-9477(98)00137-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) grown on GaAs (100), (211)B and (311)B substrates by molecular beam epitaxy at different growth temperatures (T-s) have been investigated. QDs were observed after deposition of 2ML(100) (or 4ML(311)) of InAs on GaAs (100) (or (311)B) at T-s ranging from 450 degrees C to 530 degrees C, The average density decreases and the average size increases monotonically with increasing T-s. QDs with bimodal size distribution were formed when 6ML(211) of InAs was deposited on GaAs (211)B at lower T-s. When the same amount of InAs was deposited at higher T-s, however, QDHs were observed. The photoluminescence intensity of the QDs and QDHs showed similar temperature dependence, whereas the excitation density dependence showed quite different behaviors. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：672 / 677

页数：6

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