Amphoteric phosphorus doping for stable p-type ZnO

被引：73

作者：

Allenic, Arnold

Guo, Wei

Chen, Yanbin

Katz, Michael Brandon

Zhao, Guangyuan

Che, Yong

Hu, Zhendong

Liu, Bing

Zhang, Sheng Bai

Pan, Xiaoqing

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[2] IMRA Amer Inc, Ann Arbor, MI 48105 USA

[3] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 20期

关键词：

D O I：

10.1002/adma.200700083

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The role of dislocations in stable p-type phosphorus-doped ZnO epitaxial films is investigated. It is shown that good p-type conductivity is always associated with a considerable increase in the density of dislocations, which can aid the formation of shallow complex acceptors and provide sinks for native donors.

引用

收藏

页码：3333 / +

页数：6

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