Fabrication of stable wide-band-gap ZnO/MgO multilayer thin films

被引：108

作者：

Bhattacharya, P ^{[1
]}

Das, RR ^{[1
]}

Katiyar, RS ^{[1
]}

机构：

[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.1609250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication of stable wide-band-gap (similar to6 eV) ZnO/MgO multilayer thin films using pulsed-laser deposition on c-plane Al2O3 substrates. The thickness of ZnO layers was varied in the range of 0.75-2.5 nm inside the MgO host with a constant MgO thickness of 1 nm. With a decrease in the thickness of ZnO sublayers, abrupt structural transition from hexagonal to cubic phase was observed. The band gap of the films was found to be influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure exhibited band-gap values of 3.5 and 6 eV, respectively. The x-ray photoelectron spectroscopy analysis confirmed that the Mg content of the films was about 40% and 60% in the hexagonal and cubic phases, respectively. Annealing at 750 degreesC did not influence the structural and optical properties of the ZnO/MgO multilayers. (C) 2003 American Institute of Physics.

引用

页码：2010 / 2012

页数：3

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