FieldStop IGBT with MOS-like (tailless) turn-off

被引：4

作者：

Hüsken, H ^{[1
]}

Stückler, F ^{[1
]}

机构：

[1] Infineon Technol, D-81609 Munich, Germany

来源：

ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/ISPSD.2003.1225296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present electrical characteristics of a 1200V Fieldstop-IGBT based on a high resistance substrate and device thickness between 100mum and 120mum. The vertical optimisation leads to strongly reduced conduction and switching losses, especially under soft switching (ZVT) conditions. The turn-off transients are strongly affected by the design. Under hard-switching conditions, this IGBT shows a MOS-like current waveform without the tail current typical for bipolar devices.

引用

页码：338 / 340

页数：3

共 5 条

[1]

[Anonymous], P IEEE 12 INT S POW

[2]

DEWAR S, 2000, P PCIM EUR

[3] 1200V-trench-IGBT study with square short circuit SOA [J].

Laska, T ;

Pfirsch, F ;

Hirler, F ;

Niedermeyr, J ;

Schaffer, C ;

Schmidt, T .

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, :433-436

[4] Advanced 60μm thin 600V Punch-Through IGBT concept for extremely low forward voltage and low turn-off loss [J].

Matsudai, T ;

Nozaki, H ;

Umekawa, S ;

Tanaka, M ;

Kobayashi, M ;

Hattori, H ;

Nakagawa, A .

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, :441-444

[5]

Nakamura K, 2002, PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P277

← 1 →