Advanced 60μm thin 600V Punch-Through IGBT concept for extremely low forward voltage and low turn-off loss

被引：20

作者：

Matsudai, T ^{[1
]}

Nozaki, H ^{[1
]}

Umekawa, S ^{[1
]}

Tanaka, M ^{[1
]}

Kobayashi, M ^{[1
]}

Hattori, H ^{[1
]}

Nakagawa, A ^{[1
]}

机构：

[1] Toshiba Co Ltd, Semicond Co, Discrete Semicond Div, Saiwai Ku, Kawasaki, Kanagawa 2108583, Japan

来源：

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年

关键词：

D O I：

10.1109/ISPSD.2001.934647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A vertical trench gate 600 V PT (Punch Through) IGBT structure with a new concept of thin substrate wafer with a low dose n-buffer and a transparent p-emitter is proposed to realize an excellent trade-off relation between the device on-state voltage and the switching speed. In this paper, we have fabricated and evaluated 600 V/150 A rated thin wafer PT IGBT in a 60 mum thin silicon substrate. It was experimentally confirmed that 60 mum PT IGBTs with a transparent p-emitter have an excellent trade-off relation for room temperature and 125 degreesC. Especially the fabricated 60 mum thin 600 V PT IGBTs have realized an on-state voltage as low as 1.23 V at 150 A/cm(2) current density with an extremely short fall-time of 60 ns for 25 degreesC.

引用

页码：441 / 444

页数：4

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