600V trench-gate NPT-IGBT with excellent low on-state voltage

被引：3

作者：

Tanaka, M ^{[1
]}

Teramae, S ^{[1
]}

Takahashi, Y ^{[1
]}

Takeda, T ^{[1
]}

Yamaguchi, M ^{[1
]}

机构：

[1] Toshiba Corp, Semicond Co, Saiwai Ku, Kawasaki, Kanagawa 2128583, Japan

来源：

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ISPSD.2000.856825

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 600V Non-Punch Through (NPT) IGBT which has low on-state voltage (V-CE(sat)) has been developed. This device has a fine pitch trench-gate structure at the emitter side and the collector layer with low injection efficiency at collector side. A novel profile has been installed to realize low injection efficiency and low V-CE(sat). By numerical simulation, it has been confirmed that the trade-off relation between V-CE(sat) and turn-off loss of the trench-gate NPT-IGBT is as good as that of the trench-gate punch through (PT-)IGBT. Adopting the novel profile for the collector structure, the low V-CE(sat) of 1.6V at 180A/cm(2) has been realized at the 600V trench-gate NPT-IGBT.

引用

页码：279 / 282

页数：4

共 4 条

[1]

*ISE INT SYST ENG, 1997, ISE TCAD MUNUALS

[2]

Laska T, 1997, ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, P361, DOI 10.1109/ISPSD.1997.601518

[3] 1200V-trench-IGBT study with square short circuit SOA [J].

Laska, T ;

Pfirsch, F ;

Hirler, F ;

Niedermeyr, J ;

Schaffer, C ;

Schmidt, T .

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, :433-436

[4] 1200V trench gate NPT-IGBT(IEGT) with excellent low on-state voltage [J].

Takeda, T ;

Kuwahara, M ;

Kamata, S ;

Tsunoda, T ;

Imamura, K ;

Nakao, S .

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, :75-79

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