Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 μm

被引：15

作者：

Moreau, G.

Martinez, A.

Cong, D.-Y.

Merghem, K.

Miard, A.

Lemitre, A.

Voisin, P.

Ramdane, A.

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[2] Innolume GmbH, D-44263 Dortmund, Germany

[3] Nanoplus Nanosyst & Technol GmbH, D-97218 Gerbrunn, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期

关键词：

D O I：

10.1063/1.2778759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report a study of the linear electro-optic coefficient in waveguides containing InGaAs/GaAs quantum dots with a band gap at 1.3 mu m. The Pockels effect is investigated in the 1.55 mu m telecommunication window. The measured linear electro-optic coefficient for InGaAs/GaAs is similar to 3.4x10(-11) m/V, much higher than that of the bulk or quantum well material. An similar to 35% enhancement of the phase variation is achieved compared to that obtained in bulk GaAs waveguides. Finally, a spectral bandwidth of similar to 100 nm is demonstrated in the 1.5-1.6 mu m window. (c) 2007 American Institute of Physics.

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页数：3

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