Static and dynamic measurements of the α-factor of five-quantum-dot-layer single-mode lasers emitting at 1.3 μm on GaAs -: art. no. 211115

被引：40

作者：

Martinez, A

Lemaitre, A

Merghem, K

Ferlazzo, L

Dupuis, C

Ramdane, A

Provost, JG

Dagens, B

Le Gouezigou, O

Gauthier-Lafaye, O

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[2] Alcatel Thales 35 Lab, F-91460 Marcoussis, France

[3] CNRS, Lab Anal & Architecture Syst, F-31077 Toulouse, France

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 21期

关键词：

D O I：

10.1063/1.1935754

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The "material" and "device" linewidth enhancement factor alpha of five-quantum-dot (QD)-layer single-mode lasers emitting at 1.3 mu m are investigated using two methods. The Hakki-Paoli method associated with pulsed analysis of Fabry-Perot modes below threshold demonstrates a record value of 0.7 at 1295 nm. High-frequency current modulation experiments showed a value of 2.0 just above threshold at 1.3 mu m with a steady increase with the current. Dynamic measurements on a three-QD layer device, with a reduced ground state optical gain, showed a similar increase of alpha with current but at a higher rate. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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