35 GHz mode-locking of 1.3 μm quantum dot lasers

被引:86
作者
Kuntz, M
Fiol, G
Lämmlin, M
Bimberg, D
Thompson, MG
Tan, KT
Marinelli, C
Penty, RV
White, IH
Ustinov, VM
Zhukov, AE
Shernyakov, YM
Kovsh, AR
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[4] NSC Nanosemicond GmbH, D-44227 Dortmund, Germany
关键词
D O I
10.1063/1.1776340
中图分类号
O59 [应用物理学];
学科分类号
摘要
35 GHz passive mode-locking of 1.3 mum (InGa)As/GaAs quantum dot lasers is reported. Hybrid mode-locking was achieved at frequencies up to 20 GHz. The minimum pulse width of the Fourier-limited pulses was 7 ps with a peak power of 6 mW. Low uncorrelated timing jitter below 1 ps was found in cross correlation experiments. High-frequency operation of the lasers was eased by a ridge waveguide design that includes etching through the active layer. (C) 2004 American Institute of Physics.
引用
收藏
页码:843 / 845
页数:3
相关论文
共 16 条
[1]  
[Anonymous], P OPT FIB COMM C MAR
[2]   Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers [J].
Bhattacharya, P ;
Ghosh, S ;
Pradhan, S ;
Singh, J ;
Wu, ZK ;
Urayama, J ;
Kim, K ;
Norris, TB .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (08) :952-962
[3]   InGaAs-GaAs quantum-dot lasers [J].
Bimberg, D ;
Kirstaedter, N ;
Ledentsov, NN ;
Alferov, ZI ;
Kopev, PS ;
Ustinov, VM .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :196-205
[4]  
Bimberg D., 1999, QUANTUM DOT HETEROST
[5]   Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers [J].
Huang, XD ;
Stintz, A ;
Li, H ;
Lester, LF ;
Cheng, J ;
Malloy, KJ .
APPLIED PHYSICS LETTERS, 2001, 78 (19) :2825-2827
[6]   1.3 μm room-temperature GaAs-based quantum-dot laser [J].
Huffaker, DL ;
Park, G ;
Zou, Z ;
Shchekin, OB ;
Deppe, DG .
APPLIED PHYSICS LETTERS, 1998, 73 (18) :2564-2566
[7]   LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J].
KIRSTAEDTER, N ;
LEDENTSOV, NN ;
GRUNDMANN, M ;
BIMBERG, D ;
USTINOV, VM ;
RUVIMOV, SS ;
MAXIMOV, MV ;
KOPEV, PS ;
ALFEROV, ZI ;
RICHTER, U ;
WERNER, P ;
GOSELE, U ;
HEYDENREICH, J .
ELECTRONICS LETTERS, 1994, 30 (17) :1416-1417
[8]   Spectrotemporal response of 1.3 μm quantum-dot lasers [J].
Kuntz, M ;
Ledentsov, NN ;
Bimberg, D ;
Kovsh, AR ;
Ustinov, VM ;
Zhukov, AE ;
Shernyakov, YM .
APPLIED PHYSICS LETTERS, 2002, 81 (20) :3846-3848
[9]  
Mao EH, 1997, ELECTRON LETT, V33, P1641, DOI 10.1049/el:19971105
[10]   Gain and linewidth enhancement factor in InAs quantum-dot laser diodes [J].
Newell, TC ;
Bossert, DJ ;
Stintz, A ;
Fuchs, B ;
Malloy, KJ ;
Lester, LF .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) :1527-1529