Gain and linewidth enhancement factor in InAs quantum-dot laser diodes

被引：236

作者：

Newell, TC ^{[1
]}

Bossert, DJ

Stintz, A

Fuchs, B

Malloy, KJ

Lester, LF

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] USAF, Res Lab, Kirtland AFB, NM 87117 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 12期

关键词：

linewidth enhancement factor; quantum dots; semiconductor laser;

D O I：

10.1109/68.806834

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amplified spontaneous emission measurements are investigated below threshold in InAs quantum-dot lasers emitting at 1.22 mu m, The dot layer of the laser was grown in a strained quantum well (QW) on a GaAs substrate. Ground state gain is determined from cavity mode Fabry-Perot modulation. As the injection current increases, the gain rises super-linearly while changes in the index of refraction decrease, Below the onset of gain saturation, the linewidth enhancement factor is as small as 0.1, which is significantly lower than that reported for QW lasers.

引用

页码：1527 / 1529

页数：3

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