Improved method for gain/index measurements of semiconductor lasers

被引：17

作者：

Bossert, DJ ^{[1
]}

Gallant, D ^{[1
]}

机构：

[1] ROCKWELL POWER SYST,KIRTLAND AFB,NM 87185

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 04期

关键词：

semiconductor junction lasers; gain measurement;

D O I：

10.1049/el:19960193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved experimental method for measuring gain and refractive index in semiconductor lasers from below-threshold amplified spontaneous emission spectra is presented. Broad-area, as opposed to narrow-stripe width, diode lasers and a far-field spatial filtering technique are employed to eliminate uncertainties associated with lateral waveguiding and carrier confinement.

引用

收藏

页码：338 / 339

页数：2

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