ANTIGUIDING IN NARROW STRIPE GAIN-GUIDED INGAAS-GAAS STRAINED-LAYER LASERS

被引：20

作者：

BEERNINK, KJ ^{[1
]}

ALWAN, JJ ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 01期

关键词：

D O I：

10.1063/1.347656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present data on strong carrier-induced antiguiding present in strained-layer InGaAs-GaAs-AlGaAs lasers. We calculate a value of 12.9 for the Petermann K factor, and a corresponding antiguiding factor of b = 6.4. The magnitude of the carrier-induced index depression in the well is estimated to range with drive current from 0.032 to 0.41. In all cases, the antiguiding is much stronger than reported for similar GaAs-AlGaAs lasers. In addition, we show that emission from short cavity devices occurs from two distinct transitions, with emission from the GaAs barriers contributing a single peak to the far field, and emission from the InGaAs well contributing two lobes. The result is a three-lobed far-field pattern at laser threshold of the GaAs barrier emission.

引用

页码：56 / 60

页数：5

共 24 条

[1] TWIN-STRIPE INJECTION-LASER WITH LEAKY-MODE COUPLING [J].