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Linewidth enhancement factor in InGaAs quantum-dot amplifiers

被引：62
作者：
Schneider, S [1 ]
Borri, P
Langbein, W
Woggon, U
Sellin, RL
Ouyang, D
Bimberg, D
机构：
[1] Univ Dortmund, D-44221 Dortmund, Germany
[2] Univ Cambridge, Dept Engn, Ctr Photon Syst, Cambridge CB2 1PZ, England
[3] Univ Sci & Technol Lille, Lab Phys Lasers Atomes & Mol, CNRS, UMR 8523, F-5965 Villeneuve Dascq, France
[4] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2004年 / 40卷 / 10期
关键词：
amplifiers; quantum dots (QDs); semiconductor devices; semiconductor lasers; spectroscopy;
D O I：
10.1109/JQE.2004.834779
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report systematic measurements of the linewidth enhancement factor (LEF) in an electrically pumped InGaAs quantum-dot (QD) amplifier in the temperature range from 50 K to room temperature. At injection currents below transparency, the value of the linewidth enhancement factor of the ground-state interband (excitonic) transition is between 0.4 and 1, and increases with increasing carrier density. Additionally, we investigate the spectral dependence of the LEF by tuning the wavelength of our optical probe from below resonance with the ground state of the QDs up to resonance with the first optically active excited-state transition. We find a decrease of the LEF with increasing photon energy at all investigated temperatures.
引用
收藏
页码：1423 / 1429
页数：7
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