Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers

被引:19
作者
Gerhardt, NC
Hofmann, MR
Hader, J
Moloney, JV
Koch, SW
Riechert, H
机构
[1] Ruhr Univ Bochum, D-44780 Bochum, Germany
[2] Univ Arizona, Arizona Ctr Math Sci, Tucson, AZ 85721 USA
[3] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany
[4] Infineon Technol, Corp Res CPR 7, D-81730 Munich, Germany
关键词
D O I
10.1063/1.1638628
中图分类号
O59 [应用物理学];
学科分类号
摘要
Experimental results on the linewidth enhancement factor alpha of 1.3 mum (GaIn)(NAs) lasers are presented and analyzed on the basis of a comparison with theoretical data obtained from a microscopic model. Our experimental data are obtained from the shift of the Fabry-Perot modes with injection current using an approach to eliminate temperature-dependent artifacts. At the emission wavelength at threshold we find a value of 2.5 for alpha which clamps for varying injection current. (C) 2004 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
相关论文
共 12 条
[2]   Parametric study of Ga1-xInxNyAs1-y/GaAs quantum wells for 1.3-μm laser operation [J].
Chow, WW ;
Harris, JS .
APPLIED PHYSICS LETTERS, 2003, 82 (11) :1673-1675
[3]   Microscopic modeling of gain and luminescence in semiconductors [J].
Hader, J ;
Moloney, JV ;
Koch, SW ;
Chow, WW .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (03) :688-697
[4]   Microscopic theory of gain and spontaneous emission in GaInNAs laser material [J].
Hader, J ;
Koch, SW ;
Moloney, JV .
SOLID-STATE ELECTRONICS, 2003, 47 (03) :513-521
[5]   Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers [J].
Hader, J ;
Bossert, D ;
Stohs, J ;
Chow, WW ;
Koch, SW ;
Moloney, JV .
APPLIED PHYSICS LETTERS, 1999, 74 (16) :2277-2279
[6]   GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].
HAKKI, BW ;
PAOLI, TL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1299-1306
[7]   Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers [J].
Hofmann, MR ;
Gerhardt, N ;
Wagner, AM ;
Ellmers, C ;
Höhnsdorf, F ;
Koch, J ;
Stolz, W ;
Koch, SW ;
Rühle, WW ;
Hader, J ;
Moloney, JV ;
O'Reilly, EP ;
Borchert, B ;
Egorov, AY ;
Riechert, H ;
Schneider, HC ;
Chow, WW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (02) :213-221
[8]   GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes [J].
Larson, MC ;
Kondow, M ;
Kitatani, T ;
Nakahara, K ;
Tamura, K ;
Inoue, H ;
Uomi, K .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (02) :188-190
[9]   Gain and linewidth enhancement factor in InAs quantum-dot laser diodes [J].
Newell, TC ;
Bossert, DJ ;
Stintz, A ;
Fuchs, B ;
Malloy, KJ ;
Lester, LF .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) :1527-1529
[10]   LINEWIDTH BROADENING FACTOR IN SEMICONDUCTOR-LASERS - AN OVERVIEW [J].
OSINSKI, M ;
BUUS, J .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (01) :9-29