Parametric study of Ga1-xInxNyAs1-y/GaAs quantum wells for 1.3-μm laser operation

被引：12

作者：

Chow, WW

Harris, JS

机构：

[1] Sandia Natl Labs, Semicond Mat & Device Sci Dept, Albuquerque, NM 87185 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 11期

关键词：

D O I：

10.1063/1.1561154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A microscopic laser theory was used to investigate gain properties in Ga1-xInxNyAs1-y/GaAs quantum wells. We considered combinations of x and y giving laser emission around 1.30 mum. Optical properties affecting laser threshold and dynamical response are described for structures with strain ranging from compressive to tensile. A parametric study of this kind should provide useful information for the optimization of GaInNAs vertical-cavity surface-emitting laser gain media for telecommunications applications. (C) 2003 American Institute of Physics.

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页码：1673 / 1675

页数：3

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