Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm

被引：41

作者：

Muszalski, J ^{[1
]}

Houlihan, J

Huyet, G

Corbett, B

机构：

[1] Natl Univ Ireland Univ Coll Cork, Dept Phys, Cork, Ireland

[2] Natl Univ Ireland Univ Coll Cork, Natl Microelect Res Ctr, Cork, Ireland

[3] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 07期

关键词：

D O I：

10.1049/el:20040270

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of the linewidth enhancement factor (also termed the alpha-parameter) for quantum dot semiconductor lasers emitting at 1310 nm in both single and multiple transverse modes are presented. Values between 1.5 and 3.0 were measured depending on the device length. In addition, its spectral dependence within the inhomogeneously broadened ground and excited state is investigated.

引用

页码：428 / 430

页数：3

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