Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers

被引:26
作者
Fathpour, S [1 ]
Bhattacharya, P [1 ]
Pradhan, S [1 ]
Ghosh, S [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
关键词
D O I
10.1049/el:20030944
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Measurements of ultra-low linewidth enhancement factor in ridge-waveguide tunnel injection ln(0.4)Ga(0.6)As/GaAs self-assembled quantum dot lasers have been made and the results compared with similar quantum well lasers. Values of alpha similar to3.8 were measured in the quantum well lasers, and alpha. was less than or equal to0.7 in the quantum dot lasers. The consequent suppression of filamentation in the quantum dot devices has also been observed.
引用
收藏
页码:1443 / 1445
页数:3
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