Impact of intraband relaxation on the performance of a quantum-dot laser

被引：135

作者：

Markus, A ^{[1
]}

Chen, JXX

Gauthier-Lafaye, O

Provost, JG

Paranthoën, C

Fiore, A

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

[2] Alcatel CIT, Opto, F-91461 Marcoussis, France

[3] CNR, Inst Photon & Nanotechnol, I-00156 Rome, Italy

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2003年 / 9卷 / 05期

关键词：

InGaAs-GaAs; quantum dots (DQs); semiconductor lasers;

D O I：

10.1109/JSTQE.2003.819494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements on 1.3-mum quantum-dot lasers are presented that reveal a number of interesting effects. 1) At high bias, a second lasing line appears, corresponding to the excited state transition. 2) The linewidth enhancement factor increases dramatically above threshold. 3) The modulation performance is degraded when the second lasing line appears. A comprehensive numerical model is developed to explain this behavior. We attribute it to incomplete gain clamping above threshold. This is caused by a combination of the finite intraband relaxation time and the limited density of states.

引用

页码：1308 / 1314

页数：7

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