9.7 GHz small-signal bandwidth of three-quantum well GalnNAs/GaAs laser diodes operating at 1.35 μm

被引：9

作者：

Martinez, A

Provost, JG

Dagens, B

Sallet, V

Jahan, D

Merghem, K

Ferlazzo, L

Landreau, J

Le Gouezigou, O

Harmand, JC

Ramdane, A

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[2] ALCATEL, OPTO, F-91460 Marcoussis, France

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 07期

关键词：

D O I：

10.1049/el:20040305

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High frequency characterisation of three-quantum well GaInNAs/ GaAs lasers operating at 1.35 mum is reported. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are demonstrated, indicating the potential for high bit rate (10 Gbit/s) direct modulation of these dilute nitrides on GaAs devices.

引用

收藏

页码：425 / 427

页数：3

相关论文

共 10 条

[1] Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm [J].

Bank, SR ;

Wistey, MA ;

Yuen, HB ;

Goddard, LL ;

Ha, W ;

Harris, JS .

ELECTRONICS LETTERS, 2003, 39 (20) :1445-1446

[2] High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes [J].

Caliman, A ;

Ramdane, A ;

Meichenin, D ;

Manin, L ;

Sermage, B ;

Ungaro, G ;

Travers, L ;

Harmand, JC .

ELECTRONICS LETTERS, 2002, 38 (14) :710-712

[3] Growth of high quality InGaAsN heterostructures and their laser application [J].

Egorov, AY ;

Bernklau, D ;

Borchert, B ;

Illek, S ;

Livshits, D ;

Rucki, A ;

Schuster, M ;

Kaschner, A ;

Hoffmann, A ;

Dumitras, G ;

Amann, MC ;

Riechert, H .

JOURNAL OF CRYSTAL GROWTH, 2001, 227 :545-552

[4] 1.42 μm continuous-wave operation of GaInNAs laser diodes [J].

Gollub, D ;

Moses, S ;

Fischer, M ;

Forchel, A .

ELECTRONICS LETTERS, 2003, 39 (10) :777-778

[5] Progress in research into mixed group-V nitride alloys [J].

Kondow, M ;

Kitatani, T .

IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (01) :9-11

[6] GaInNAs: A novel material for long-wavelength semiconductor lasers [J].

Kondow, M ;

Kitatani, T ;

Nakatsuka, S ;

Larson, MC ;

Nakahara, K ;

Yazawa, Y ;

Okai, M ;

Uomi, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :719-730

[7] 1.5 μm laser on GaAs with GaIlnNAsSb quinary quantum well [J].

Li, LH ;

Sallet, V ;

Patriarche, G ;

Largeau, L ;

Bouchoule, S ;

Merghem, K ;

Travers, L ;

Harmand, JC .

ELECTRONICS LETTERS, 2003, 39 (06) :519-520

[8] FREQUENCY-RESPONSE SUBTRACTION FOR SIMPLE MEASUREMENT OF INTRINSIC LASER DYNAMIC PROPERTIES [J].

MORTON, PA ;

TANBUNEK, T ;

LOGAN, RA ;

SERGENT, AM ;

SCIORTINO, PF ;

COBLENTZ, DL .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (02) :133-136

[9]

Petermann K., 1988, LASER DIODE MODULATI

[10] 7.8 GHz small-signal modulation bandwidth of 1.3μm DQW GaInAsN/GaAs laser diodes [J].

Reinhardt, M ;

Fischer, M ;

Kamp, M ;

Forchel, A .

ELECTRONICS LETTERS, 2000, 36 (12) :1025-1026