Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm

被引：50

作者：

Bank, SR ^{[1
]}

Wistey, MA ^{[1
]}

Yuen, HB ^{[1
]}

Goddard, LL ^{[1
]}

Ha, W ^{[1
]}

Harris, JS ^{[1
]}

机构：

[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 20期

关键词：

D O I：

10.1049/el:20030928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-threshold room temperature continuous wave 1.49 mum GaIn-NAsSb lasers are presented. Room temperature threshold current density of 1.1 kA/cm(2) was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets.

引用

页码：1445 / 1446

页数：2

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