Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

被引：145

作者：

Tansu, N ^{[1
]}

Kirsch, NJ ^{[1
]}

Mawst, LJ ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Elect Comp Engn, Reed Ctr Photon, Madison, WI 53706 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 14期

关键词：

D O I：

10.1063/1.1511290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 mum, with threshold and transparency current densities as low as 211 A/cm(2) (for L=2000 mum) and 75 A/cm(2), respectively. The utilization of a tensile-strained GaAs0.67P0.33 buffer layer and GaAs0.85P0.15 barrier layers allows a highly-compressively-strained In0.4Ga0.6As0.995N0.005 QW to be grown on a high-Al-content lower cladding layer, resulting in devices with high current injection efficiency (eta(inj)similar to97%). (C) 2002 American Institute of Physics.

引用

页码：2523 / 2525

页数：3

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