Lasing characteristics of low-threshold GaInNAs lasers grown by metalorganic chemical vapor deposition

被引:92
作者
Kawaguchi, M [1 ]
Miyamoto, T [1 ]
Gouardes, E [1 ]
Schlenker, D [1 ]
Kondo, T [1 ]
Koyama, F [1 ]
Iga, K [1 ]
机构
[1] Tokyo Inst Technol, Microsyst Res Ctr, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 7B期
关键词
GaInNAs; long wavelength; laser; MOCVD; quantum well; VCSEL;
D O I
10.1143/JJAP.40.L744
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the lasing characteristics of low-threshold long-wave length GaInNAs double quantum well (DQW) lasers grown by metalorganic chemical vapor deposition (MOCVD). We have achieved a threshold current density of 450 A/cm(2) for a 1.28-mum-emitting laser. This is the lowest value for 1.3-mum-range GaInNAs lasers grown by MOCVD. We also observed high characteristic temperatures (T-o) of 210 K and 130 K for 1.25 mum and 1.28 mum lasers, respectively. In addition, we investigated the gradual change in lasing characteristics under pulsed operation. The blue shift of an emission wavelength and a threshold current reduction were observed, which is similar to that observed in the thermal annealing of GaInNAs.
引用
收藏
页码:L744 / L746
页数:3
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