Optical quality dependence on growth rate for metalorganic chemical vapor deposition grown GaInNAs/GaAs

被引：11

作者：

Kawaguchi, M ^{[1
]}

Miyamoto, T ^{[1
]}

Gouardes, E ^{[1
]}

Schlenker, D ^{[1
]}

Kondo, T ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 12A期

关键词：

GaInNAs; MOCVD; growth rate; In composition; quantum well;

D O I：

10.1143/JJAP.39.L1219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaInNAs/GaAs quantum wells with indium compositions of up to 39% were grown by metalorganic chemical vapor deposition under different growth rates. We found that the growth rate (similar to1 mum/h) critically affects the optical quality of GaInNAs/GaAs quantum wells and that a low growth rate (similar to0.2 mum/h) is preferable for increasing nitrogen compositions.

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收藏

页码：L1219 / L1220

页数：2

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