Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers

被引：107

作者：

Schlenker, D ^{[1
]}

Miyamoto, T ^{[1
]}

Chen, Z ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 01期

基金：

日本学术振兴会;

关键词：

GaInAs/GaAs; strained quantum well; organometallic vapor-phase epitaxy (OMVPE); tertiarybutylarsine (TBAs); critical thickness; semiconductor laser;

D O I：

10.1016/S0022-0248(99)00524-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper we present a successful growth of highly strained GaInAs/GaAs quantum wells by low-pressure organometallic vapor-phase epitaxy using tertiarybutylarsine. The transition from uniform to island or dot-like growth mode has been prohibited by carefully choosing the growth condition. Photoluminescence wavelengths of up to 1.2 mu m with a FWHM of 23 meV were obtained. We experimentally determined the maximum well thickness for highly strained GaInAs/GaAs QW of good crystal quality and compared our results to critical thickness models. Transmission electron microscopy measurements were used to discuss the degradation mechanism for highly strained GaInAs layers. Also excellent lasing properties of 1.2 mu m highly strained GaInAs/GaAs quantum well lasers have been demonstrated. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：27 / 36

页数：10

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