Uncooled high-temperature (130 degrees C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s

被引：11

作者：

Czotscher, K ^{[1
]}

Larkins, EC ^{[1
]}

Weisser, S ^{[1
]}

Benz, W ^{[1
]}

Daleiden, J ^{[1
]}

Fleissner, J ^{[1
]}

Maier, M ^{[1
]}

Ralston, JD ^{[1
]}

Rosenzweig, J ^{[1
]}

机构：

[1] SDL INC,SAN JOSE,CA 95134

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 05期

关键词：

digital modulation; high-speed devices; laser thermal factors; quantum-well lasers; semiconductor lasers;

D O I：

10.1109/68.588108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Short-haul fiber-optic communication systems require high-speed semiconductor lasers that can operate uncooled over a wide temperature range, In this letter, we describe high-speed short-cavity InGaAs-GaAs multiple-quantum-wed lasers operating at 1.1-mu m wavelength. The Fabry-Perot lasers were fabricated in a triple mesa geometry suitable for on-wafer probing. With 3x200 mu m(2) ridge-waveguide lasers, which showed the best compromise between high-temperature and high-speed performance, a 3 dB modulation bandwidth of 14.5 GHz at 130 degrees C was achieved, Uncooled 20-Gb/s operation of these lasers is presented over a wide-temperature range from 25 degrees C to 130 degrees C without automatic power control.

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收藏

页码：575 / 577

页数：3

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