25-100-DEGREES-C AUTOMATIC POWER-CONTROL FREE 600MBIT/S MODULATION OF 0.98-MU-M INGAAS/ALGAAS LASER FOR HIGH-SPEED DATA LINK

被引：4

作者：

CHIDA, H

FUKAGAI, K

MIYAZAKI, T

ISHIKAWA, S

机构：

[1] Opto-electronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 23期

关键词：

SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19951361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly stable, temperature insensitive laser diodes emitting at 0.98 mu m have bren developed. A low 2.3 mA threshold current was achieved at 25 degrees C, and a high 0.48 W/A slope efficiency was achieved at 100 degrees C by optimising the waveguide structure, cavity length and front mirror reflectance. The power attentuation ratio from 25 to 100 degrees C was as low as -0.8 dB under a 30 mA drive current. The eye-opening ratio was >94% up to 100 degrees C under automatic power control (APC) free 600 Mbit/s modulation and 2.3 mA DC bias.

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页码：2006 / 2008

页数：3

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