SUBMILLIAMPERE THRESHOLD BURIED-HETEROSTRUCTURE INGAAS/GAAS SINGLE-QUANTUM-WELL LASERS GROWN BY SELECTIVE-AREA EPITAXY

被引：13

作者：

LAMMERT, RM

COCKERILL, TM

FORBES, DV

SMITH, GM

COLEMAN, JJ

机构：

[1] Microelectronics Laboratory, Materials Research Laboratory, University of Illinois, Urbana, IL 61801

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.324672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained-layer InGaAs-GaAs-AlGaAs single quantum well buried heterostructure lasers grown by selective-area MOCVD are described. Threshold currents of 2.65 mA for an uncoated device and 0.97 mA for a coated device have been obtained. A peak optical output power of 170 mW per uncoated facet for a device with a 4 mum active region width was also achieved. Peak emissions wavelengths range from 0.956 to 1.032 mum.

引用

收藏

页码：1073 / 1075

页数：3

相关论文

共 9 条

[1] STRAINED SINGLE-QUANTUM-WELL INGAAS LASERS WITH A THRESHOLD CURRENT OF 0.25 MA [J].

CHEN, TR ;

ENG, LE ;

ZHAO, B ;

ZHUANG, YH ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1993, 63 (19) :2621-2623

[2] WAVELENGTH TUNING IN STRAINED-LAYER INGAAS-GAAS-ALGAAS QUANTUM-WELL LASERS BY SELECTIVE-AREA MOCVD [J].

COCKERILL, TM ;

FORBES, DV ;

HAN, H ;

TURKOT, BA ;

DANTZIG, JA ;

ROBERTSON, IM ;

COLEMAN, JJ .

JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (02) :115-119

[3] STRAINED-LAYER INGAAS GAAS ALGAAS BURIED-HETEROSTRUCTURE QUANTUM-WELL LASERS BY 3-STEP SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

COCKERILL, TM ;

FORBES, DV ;

DANTZIG, JA ;

COLEMAN, JJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :441-445

[4]

COCKERILL TM, IN PRESS IEEE PHOTON

[5]

COCKERILL TM, 1993, IEEE PHOTONIC TECH L, V4, P448

[6] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS [J].

DEPPE, DG ;

HSIEH, KC ;

HOLONYAK, N ;

BURNHAM, RD ;

THORNTON, RL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4515-4520

[7] TEMPERATURE ENGINEERED GROWTH OF LOW-THRESHOLD QUANTUM WELL LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DZURKO, KM ;

MENU, EP ;

BEYLER, CA ;

OSINSKI, JS ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1989, 54 (02) :105-107

[8] LOW THRESHOLD BURIED-HETEROSTRUCTURE QUANTUM WELL LASERS BY EXCIMER LASER ASSISTED DISORDERING [J].

EPLER, JE ;

THORNTON, RL ;

MOSBY, WJ ;

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1988, 53 (16) :1459-1461

[9] EXTREMELY LOW THRESHOLD CURRENT, BURIED-HETEROSTRUCTURE STRAINED INGAAS GAAS MULTIQUANTUM WELL LASERS [J].

XIAO, JW ;

XU, JY ;

YANG, GW ;

ZHANG, JM ;

XU, ZT ;

CHEN, LH .

ELECTRONICS LETTERS, 1992, 28 (02) :154-156