EXTREMELY LOW THRESHOLD CURRENT, BURIED-HETEROSTRUCTURE STRAINED INGAAS GAAS MULTIQUANTUM WELL LASERS

被引：11

作者：

XIAO, JW

XU, JY

YANG, GW

ZHANG, JM

XU, ZT

CHEN, LH

机构：

[1] Institute of Semiconductors, Chinese Academy of Sciences

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 02期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A very low CW threshold current of 1.65 mA at room temperature was obtained for an uncoated buried-heterostructure strained layer multiquantum well InGaAs-GaAs laser fabricated using hybrid molecular beam epitaxy and liquid phase epitaxy crystal growth technique. External differential quantum efficiency as high as 44.6% (0.53 mW/mA) and output power of more than 30 mW per facet were achieved in the same laser.

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收藏

页码：154 / 156

页数：3

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