LOW THRESHOLD CURRENT LATERAL INJECTION-LASERS ON SEMIINSULATING SUBSTRATES FABRICATED USING SI IMPURITY-INDUCED DISORDERING

被引：5

作者：

BEYLER, CA

HUMMEL, SG

CHEN, Q

OSINSKI, JS

DAPKUS, PD

机构：

[1] Center for Photonic Technology, University of Southern California, Los Angeles, California

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 15期

关键词：

OPTOELECTRONICS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19910863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of a laser design that uses dual Si impurity-induced disordering stripes to both bury the active region and provide lateral electron injection are reported. Without heatsinking, lasers have room temperature CW threshold current as low as 2.77 mA and a single facet external quantum efficiency as high as 30%.

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收藏

页码：1372 / 1374

页数：3

相关论文

共 11 条

[1]

BEYLER CA, 1990, 90 LEOS C BOST, P250

[2] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS [J].

DEPPE, DG ;

HSIEH, KC ;

HOLONYAK, N ;

BURNHAM, RD ;

THORNTON, RL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4515-4520

[3] LOW-THRESHOLD QUANTUM WELL LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON NONPLANAR SUBSTRATES [J].

DZURKO, KM ;

MENU, EP ;

BEYLER, CA ;

OSINSKI, JS ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1450-1458

[4] VERTICAL CAVITY SINGLE QUANTUM WELL LASER [J].

JEWELL, JL ;

HUANG, KF ;

TAI, K ;

LEE, YH ;

FISCHER, RJ ;

MCCALL, SL ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1989, 55 (05) :424-426

[5] DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION [J].

MEEHAN, K ;

HOLONYAK, N ;

BROWN, JM ;

NIXON, MA ;

GAVRILOVIC, P ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :549-551

[6]

NARUI H, 1990, 12TH INT SEM LAS C D, P78

[7] OPTIMIZATION OF STRIPE WIDTH FOR LOW-THRESHOLD OPERATION OF QUANTUM-WELL LASER-DIODES [J].

OSINSKI, JS ;

DZURKO, KM ;

HUMMEL, SG ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1990, 56 (25) :2487-2489

[8] TRANSVERSE JUNCTION BURIED HETEROSTRUCTURE (TJ-BH) LASER DIODE GROWN BY MOVPE [J].

SHIMOYAMA, K ;

KATOH, M ;

NOGUCHI, M ;

INOUE, Y ;

GOTOH, H ;

SUZUKI, Y ;

SATOH, T .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :803-808

[9] ULTRALOW THRESHOLD, GRADED-INDEX WAVEGUIDE, SEPARATE CONFINEMENT, CW BURIED-HETEROSTRUCTURE LASERS [J].

TSANG, WT ;

LOGAN, RA ;

DITZENBERGER, JA .

ELECTRONICS LETTERS, 1982, 18 (19) :845-847

[10] TRANSVERSE JUNCTION STRIPE LASER WITH A LATERAL HETEROBARRIER BY DIFFUSION ENHANCED ALLOY DISORDERING [J].

YANG, YJ ;

LO, YC ;

LEE, GS ;

HSIEH, KY ;

KOLBAS, RM .

APPLIED PHYSICS LETTERS, 1986, 49 (14) :835-837