LOW THRESHOLD BURIED-HETEROSTRUCTURE QUANTUM WELL LASERS BY EXCIMER LASER ASSISTED DISORDERING

被引：5

作者：

EPLER, JE

THORNTON, RL

MOSBY, WJ

PAOLI, TL

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 16期

关键词：

D O I：

10.1063/1.99966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1459 / 1461

页数：3

共 16 条

[1] PROPERTIES OF LASER-ASSISTED DOPING IN SILICON [J].

AFFOLTER, K ;

LUTHY, W ;

VONALLMEN, M .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :185-187

[2] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BURNHAM, RD ;

SCIFRES, DR ;

STREIFER, W .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :228-230

[3]

DEPPE DG, 1988, J APPL PHYS, V64

[4]

DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[5] LASER-INDUCED DISORDERING OF GAAS-ALGAAS SUPERLATTICE AND INCORPORATION OF SI IMPURITY [J].

EPLER, JE ;

BURNHAM, RD ;

THORNTON, RL ;

PAOLI, TL ;

BASHAW, MC .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1447-1449

[6] VERY LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM WELL LASERS BY LASER-ASSISTED DISORDERING [J].

EPLER, JE ;

THORNTON, RL ;

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1988, 52 (17) :1371-1373

[7] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALGAAS DIODE-LASERS BY ANISOTROPIC DIFFUSION OF LASER-INCORPORATED SI [J].

EPLER, JE ;

BURNHAM, RD ;

THORNTON, RL ;

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :731-733

[8] UV LASER INCORPORATION OF DOPANTS INTO SILICON - COMPARISON OF 2 PROCESSES [J].

FOGARASSY, EP ;

LOWNDES, DH ;

NARAYAN, J ;

WHITE, CW .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) :2167-2173

[9] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J].

GREINER, ME ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :750-752

[10] PROPERTIES OF SI DIODES PREPARED BY ALLOYING AL INTO N-TYPE SI WITH HEAT PULSES FROM A ND-YAG LASER [J].

HARPER, FE ;

COHEN, MI .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1103-+

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