SURFACE-MORPHOLOGY OF METALORGANIC VAPOR-PHASE EPITAXY-GROWN STRAINED-LAYER INXGA1-XAS ON GAAS OBSERVED BY ATOMIC-FORCE MICROSCOPY

被引：18

作者：

HSU, CC ^{[1
]}

XU, JB ^{[1
]}

WILSON, IH ^{[1
]}

WANG, SM ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.114027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the surface morphology and growth mechanism of metalorganic vapor phase epitaxy grown strained-layer InxGa1-xAs (x=0.2 or 0.5) on GaAs with atomic force microscopy. Morphological instability of monolayer steps was observed on a 10 nm thick strained-layer In0.2Ga0.8As. Three-dimensional (3D) growth was observed for x=0.5 when grown at 650°C. By lowering the growth temperature to 600°C, the growth mode is 2-D for 5 nm films (x=0.5). Monolayer steps and 2D islands can be seen. Increasing the layer thickness to 7.5 nm at 600°C caused the growth of 3D islands and the generation of misfit dislocations. © 1995 American Institute of Physics.

引用

页码：604 / 606

页数：3

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