SPIRAL GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY

被引：9

作者：

HSU, CC ^{[1
]}

XU, JB ^{[1
]}

WILSON, IH ^{[1
]}

ANDERSSON, TG ^{[1
]}

THORDSON, JV ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 12期

关键词：

D O I：

10.1063/1.112941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Steps of monolayer height (0.28 nm) were observed by atomic force microscopy on a GaAs surface grown by molecular beam epitaxy. The monolayer terrace width between steps was found to be as large as 1000 nm in some areas. Surface reconstruction affects the surface diffusion process during growth and the shape of the step edges. Growth spirals were observed. Spirals originate from screw dislocations. The growth mechanism is according to the Burton-Cabrera-Frank theory.

引用

页码：1552 / 1554

页数：3

共 11 条

[1] MICROSCOPIC GROWTH MECHANISMS OF SEMICONDUCTORS - EXPERIMENTS AND MODELS [J].

BAUSER, E ;

STRUNK, HP .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :561-580

[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[3] OBSERVATION OF STEP BUNCHING ON VICINAL GAAS(100) STUDIED BY SCANNING-TUNNELING-MICROSCOPY [J].

HATA, K ;

KAWAZU, A ;

OKANO, T ;

UEDA, T ;

AKIYAMA, M .

APPLIED PHYSICS LETTERS, 1993, 63 (12) :1625-1627

[4] SPIRAL GROWTH OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY [J].

HSU, CC ;

LU, YC ;

XU, JB ;

WONG, TKS ;

WILSON, IH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03) :2115-2117

[5] GROWTH MODE EVOLUTION DURING HOMOEPITAXY OF GAAS (001) [J].

JOHNSON, MD ;

SUDIJONO, J ;

HUNT, AW ;

ORR, BG .

APPLIED PHYSICS LETTERS, 1994, 64 (04) :484-486

[6] EQUILIBRIUM MULTIATOMIC STEP STRUCTURE OF GAAS(001) VICINAL SURFACES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KASU, M ;

KOBAYASHI, N .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1262-1264

[7] EXTREMELY FLAT LAYER SURFACES IN LIQUID-PHASE EPITAXY OF GAAS AND ALXGA1-XAS [J].

MORLOCK, U ;

KELSCH, M ;

BAUSER, E .

JOURNAL OF CRYSTAL GROWTH, 1988, 87 (2-3) :343-349

[8] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].

NEAVE, JH ;

DOBSON, PJ ;

JOYCE, BA ;

ZHANG, J .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102

[9] THEORETICAL-STUDY OF MODE TRANSITION BETWEEN 2D-NUCLEATION AND STEP FLOW IN MBE GROWTH OF GAAS [J].

NISHINAGA, T ;

CHO, KI .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01) :L12-L14

[10] SCANNING TUNNELING MICROSCOPY COMPARISON OF GAAS(001) VICINAL SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

PASHLEY, MD ;

HABERERN, KW ;

GAINES, JM .

APPLIED PHYSICS LETTERS, 1991, 58 (04) :406-408

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