OBSERVATION OF STEP BUNCHING ON VICINAL GAAS(100) STUDIED BY SCANNING-TUNNELING-MICROSCOPY

被引：35

作者：

HATA, K

KAWAZU, A

OKANO, T

UEDA, T

AKIYAMA, M

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

[2] OKI ELECT IND CO LTD,SEMICOND TECHNOL LAB,HACHIOJI,TOKYO 193,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 12期

关键词：

D O I：

10.1063/1.110716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Similar step bunchings which consist of 7-9 single steps were observed by scanning tunneling microscopy on both vicinal GaAs(100) surfaces grown by metalorganic chemical-vapor deposition (MOCVD) and annealed in AsH3 atmosphere. Growth parameters, including deposition rate, layer thickness, V/III ratio, and growth temperature, did not affect the morphology of the step bunching. These results indicate that step bunching is induced during the annealing process and its surface morphology is preserved during MOCVD growth for a wide range of growth parameters.

引用

页码：1625 / 1627

页数：3

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