MONOATOMIC STEP OBSERVATION ON SI(111) SURFACES BY FORCE MICROSCOPY IN AIR

被引：52

作者：

SUZUKI, M

KUDOH, Y

HOMMA, Y

KANEKO, R

机构：

[1] NTT Applied Electronics Laboratories, Musashino

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 20期

关键词：

D O I：

10.1063/1.104934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure of a vicinal Si(111) stepped surface is analyzed by force microscopy in air to reveal a fine structure in a step bunching area, and a monoatomic step in a terrace region. Step heights of one to three monoatomic layers were also observed on a debunched Si(111) surface. These steps have low crystallographic indices [112BAR], [101BAR], [011BAR], [213BAR], and [123BAR]. The force microscope images were in good agreement with scanning electron microscope and reflection electron microscope images observed in ultrahigh vacuum just after sample annealing by resistive heating.

引用

页码：2225 / 2227

页数：3

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