PSEUDOMORPHIC N-INGAP/INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS FOR LOW-NOISE AMPLIFIERS

We developed 0.15-mum-gate pseudomorphic N-In-GaP/InGaAs/GaAs HEMT's for low-noise amplifiers. Passivated devices exhibit a noise figure of 0.41 dB with an associated gain of 13.0 dB at 12 GHz including package loss, and of 1.2 dB with an associated gain of 5.8 dB at 50 GHz. Reducing the short-channel effects is the key to achieve the best performance ever reported for passivated and packaged low-noise HEMT's on GaAs substrates. A high aspect ratio under the thin N-InGaP layer and good carrier confinement in the pseudomorphic InGaAs channel reduce the undesirable short-channel effects in our devices.