Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine

被引：36

作者：

Pan, Z ^{[1
]}

Miyamoto, T ^{[1
]}

Schlenker, D ^{[1
]}

Sato, S ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 11期

关键词：

D O I：

10.1063/1.368967

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The low temperature growth of highly strained GaInNAs/GaAs quantum wells was investigated by low-pressure metalorganic chemical vapor deposition (MOCVD) using tertiarybutylarsine (TBAs) and dimethylhydrazine. We found that the incorporation behavior of indium in the strained GaInAs layers at low growth temperature was very different from that at high growth temperature. The N content dropped rapidly with increasing In content in the strained GaInNAs layer. It is pointed out that the V/III ratio is an important growth parameter for TBAs based MOCVD. The V/III ratio strongly affected both the photoluminescence intensity and the alloy composition of the GaInNAs. (C) 1998 American Institute of Physics. [S0021-8979(98)09923-X].

引用

页码：6409 / 6411

页数：3

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