Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition

被引：30

作者：

Kawaguchi, M ^{[1
]}

Gouardes, E ^{[1
]}

Schlenker, D ^{[1
]}

Kondo, T ^{[1
]}

Miyamoto, T ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, MicroSyst Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 21期

关键词：

Current density - Metallorganic chemical vapor deposition - Molecular beam epitaxy - Semiconducting gallium compounds;

D O I：

10.1049/el:20001268

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A metal organic chemical vapour deposition grown GaInNAs quantum well laser emitting at 1.25 mum is reported. The lowest threshold current density obtained by 50 mum wide stripe lasers was 340A/cm(2) for a cavity length of 1420 mum, which is almost comparable to the lowest value reported for GaInNAs lasers grown by molecular beam epitaxy. The threshold current density per well was 170A/cm(2), which is the lowest threshold value reported to date.

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页码：1776 / 1777

页数：2

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