8W continuous wave operation of InGaAsN lasers at 1.3μm

被引：132

作者：

Livshits, DA ^{[1
]}

Egorov, AY

Riechert, H

机构：

[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Infineon Technol, Corp Res Photon, D-81730 Munich, Germany

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 16期

关键词：

D O I：

10.1049/el:20000966

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on the generation of 8W of optical power at 1.3 mu m under continuous wave (CW) operation from a 100 mu m aperture of an InGaAsN single quantum well laser. The laser was facet-coated and the active region maintained at 10 degrees C by heatsinking. A preliminary lifetime test produced no noticeable degradation of laser characteristics after 1000 hours of CW operation at an output power of 1.5W. Threshold current densities as low as 335A/cm(2) were measured on such broad area lasers. These values are a significant improvement over previously published data for lasers in the InGaAsN material system.

引用

页码：1381 / 1382

页数：2

共 6 条

[1] 1.29μm GalnNAs multiple quantum-well ridge-waveguide laser diodes with improved performance [J].

Borchert, B ;

Egorov, AY ;

Illek, S ;

Komainda, M ;

Riechert, H .

ELECTRONICS LETTERS, 1999, 35 (25) :2204-2206

[2] High power CW operation of InGaAsN lasers at 1.3μm [J].

Egorov, AY ;

Bernklau, D ;

Livshits, D ;

Ustinov, V ;

Alferov, ZI ;

Riechert, H .

ELECTRONICS LETTERS, 1999, 35 (19) :1643-1644

[3]

GARBUZOV D, 1999, SPIE PHOT W C 99 SAN

[4] Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm [J].

Höhnsdorf, F ;

Koch, J ;

Leu, S ;

Stolz, W ;

Borchert, B ;

Druminski, M .

ELECTRONICS LETTERS, 1999, 35 (07) :571-572

[5] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[6] 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers [J].

Nakahara, K ;

Kondow, M ;

Kitatani, T ;

Larson, MC ;

Uomi, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (04) :487-488

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