8W continuous wave operation of InGaAsN lasers at 1.3μm

被引:132
作者
Livshits, DA [1 ]
Egorov, AY
Riechert, H
机构
[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Infineon Technol, Corp Res Photon, D-81730 Munich, Germany
关键词
D O I
10.1049/el:20000966
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors report on the generation of 8W of optical power at 1.3 mu m under continuous wave (CW) operation from a 100 mu m aperture of an InGaAsN single quantum well laser. The laser was facet-coated and the active region maintained at 10 degrees C by heatsinking. A preliminary lifetime test produced no noticeable degradation of laser characteristics after 1000 hours of CW operation at an output power of 1.5W. Threshold current densities as low as 335A/cm(2) were measured on such broad area lasers. These values are a significant improvement over previously published data for lasers in the InGaAsN material system.
引用
收藏
页码:1381 / 1382
页数:2
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