Insights into carrier recombination processes in 1.3μm GaInNAs-based semiconductor lasers attained using high pressure

被引：23

作者：

Fehse, R ^{[1
]}

Sweeney, SJ

Adams, AR

O'Reilly, EP

Egorov, AY

Riechert, H

Illek, S

机构：

[1] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England

[2] Infineon Technol AG, Corp Res, D-81730 Munich, Germany

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 02期

关键词：

D O I：

10.1049/el:20010049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold current of 1.3 mum GaInNAs lasers increases by similar to 30% up to a pressure of 1GPa compared with a decrease of similar to 15% for Auger-dominated InGaAsP devices. indicating that direct band-to-band Auger recombination is not important in these materials. The lasing energy varies sub-linearly with pressure, indicative of the increasing interaction of the N-level with the conduction band.

引用

页码：92 / 93

页数：2

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