Gain in 1.3 μm materials:: InGaNAs and InGaPAs semiconductor quantum-well lasers

The absorption and gain for an InGaNAs/GaAs quantum-well structure is calculated and compared to that of a mon conventional InGaAs/InGaPAs structure, both lasing in the 1.3 mu m range. Despite significant differences in the band structures, the gain value is comparable for high carrier densities in both structures and the transition energy at the gain maximum shows a similar blueshift with increasing carrier density. For low and intermediate carrier densities, the calculated gain in the InGaPAs system is significantly Ion;er and the bandwidth smaller than in the InGaNAs system. (C) 2000 American Institute of Physics. [S0003-6951(00)04431-4].